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1 cgh27015 15 w, 28v, gan hemt for linear communications ranging from vhf to 3 ghz crees cgh27015 is a gallium nitride (gan) high electron mobility transistor designed specifcally for high effciency, high gain and wide bandwidth capabilities, which makes the cgh27015 ideal for vhf, comms, 3g, 4g, lte, 2.3-2.9ghz wimax and bwa amplifer applications. the unmatched transistor is available in both screw-down, fange and solder-down, pill packages. package type: 440166 and 440196 pn: CGH27015F and cgh27015p re v 4.0 C ma y 2015 features ? vhf - 3.0 ghz operation ? 15 w peak power capability ? 14.5 db small signal gain ? 2 w p ave < 2.0 % evm ? 28 % effciency at 2 w average power ? designed for wimax fixed access 802.16-2004 ofdm applications ? designed for wimax mobile access 802.16e ofdma applications typical performance 2.3-2.7 ghz (t c = 25?c) parameter 2.3 ghz 2.4 ghz 2.5 ghz 2.6 ghz 2.7 ghz units small signal gain 16.9 16.0 15.1 14.6 14.3 db evm at p ave = 33 dbm 1.69 1.51 1.50 1.66 1.93 % drain effciency at p ave = 33 dbm 27.1 27.8 28.4 28.0 28.0 db note: measured in the CGH27015F-amp amplifer circuit, under 802.16 ofdm, 3.5 mhz channel bw, 1/4 cyclic prefx, 64 qam modulated burst, 5 ms burst, symbol length of 59, coding type rs-cc, coding rate type 2/3, par = 9.8 db @ 0.01 % probability on ccdf. subject to change without notice. www.cree.com/rf
2 cgh27015 rev 4.0 copyright ? 2005-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. absolute maximum ratings (not simultaneous) at 25?c case temperature parameter symbol rating units units drain-source voltage v dss 84 volts 25?c gate-to-source voltage v gs -10, +2 volts 25?c storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 4.0 ma 25?c maximum drain current 1 i dmax 1.5 a 25?c soldering temperature 2 t s 245 ?c screw torque 60 in-oz thermal resistance, junction to case 3 r jc 8.0 ?c/w 85?c case operating temperature 3 t c -40, +150 ?c note: 1 current limit for long term, reliable operation. 2 refer to the application note on soldering at www.cree.com/rf/document-library 3 measured for the CGH27015F at p diss = 14w. electrical characteristics (t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics 1 gate threshold voltage v gs(th) -3.8 -3.0 -2.3 v dc v ds = 10 v, i d = 3.6 ma gate quiescent voltage v gs(q) C -2.7 C v dc v ds = 28 v, i d = 100 ma saturated drain current i ds 2.9 3.5 C a v ds = 6.0 v, v gs = 2.0 v drain-source breakdown voltage v br 120 C C v dc v gs = -8 v, i d = 3.6 ma rf characteristics 2,3 (t c = 25 ? c, f 0 = 2.5 ghz unless otherwise noted) small signal gain g ss 13 15 C db v dd = 28 v, i dq = 100 ma drain effciency 4 20 28 C % v dd = 28 v, i dq = 100 ma, p ave = 33 dbm error vector magnitude evm C 2.0 C % v dd = 28 v, i dq = 100 ma, p ave = 33 dbm output mismatch stress vswr C C 10 : 1 y no damage at all phase angles, v dd = 28 v, i dq = 100 ma, p ave = 33 dbm ofdm p ave dynamic characteristics input capacitance c gs C 4.5 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz output capacitance c ds C 1.3 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz feedback capacitance c gd C 0.2 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz notes: 1 measured on wafer prior to packaging. 2 measured in the CGH27015F-amp test fxture. 3 under 802.16 ofdm, 3.5 mhz channel bw, 1/4 cyclic prefx, 64 qam modulated burst, 5 ms burst, symbol length of 59, coding type rs-cc, coding rate type 2/3, par = 9.8 db @ 0.01 % probability on ccdf. 4 drain effciency = p out / p dc . cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/wireless
3 cgh27015 rev 4.0 copyright ? 2005-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. typical performance data performance of cgh27015 in broadband amplifer circuit v dd = 28 v, i dq = 100 ma typical evm and effciency at 24db and 33 db vs frequency of cgh27015 in broadband amplifer circuit note: under 802.16 ofdm, 3.5 mhz channel bw, 1/4 cyclic prefx, 64 qam modulated burst, symbol length of 59, coding type rs-cc, coding rate type 2/3. -4 -2 0 2 4 6 12 14 16 18 20 22 s1 1 ( d b ) s21 ( d b ) s21 -16 -14 -12 -10 -8 -6 0 2 4 6 8 10 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3 3.4 3.5 s1 1 ( d b ) s21 ( d b ) frequency (ghz) s21 s11 s11 18% 21% 24% 27% 30% 2.4 2.8 3.2 3.6 4.0 ef f i ci en cy evm ( % ) drain efficiency evm @ 24db 0% 3% 6% 9% 12% 15% 0.0 0.4 0.8 1.2 1.6 2.0 2.3 2.4 2.5 2.6 2.7 ef f i ci en cy evm ( % ) frequency (ghz) evm @ 24 db evm @ 33 db efficiency evm @ 33db cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/wireless
4 cgh27015 rev 4.0 copyright ? 2005-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. typical performance data typical evm and effciency of cgh27015 in broadband amplifer circuit at 2.5 ghz f=2.5 ghz, 802.16-2004 ofdm, p/a=9.8 db note: under 802.16-2004 ofdm, 3.5 mhz channel bw, 1/4 cyclic prefx, 64 qam modulated burst, symbol length of 59, coding type rs-cc, coding rate type 2/3. simulated maximum available gain and k factor of the CGH27015F v dd = 28 v, i dq = 100 ma 21% 24% 27% 30% 33% 36% 2.8 3.2 3.6 4.0 4.4 4.8 d r ai n ef f i ci en cy evm ( % ) evm efficiency drain efficiency 0% 3% 6% 9% 12% 15% 18% 0.0 0.4 0.8 1.2 1.6 2.0 2.4 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 d r ai n ef f i ci en cy evm ( % ) average output power (dbm) evm mag (db) k factor cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/wireless
5 cgh27015 rev 4.0 copyright ? 2005-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. typical noise performance simulated minimum noise figure and noise resistance vs frequency of the cgh27015 v dd = 28 v, i dq = 100 ma electrostatic discharge (esd) classifcations parameter symbol class test methodology human body model hbm 1a (> 250 v) jedec jesd22 a114-d charge device model cdm ii (200 < 500 v) jedec jesd22 c101-c minimum noise figure (db) noise resistance (ohms) cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/wireless
6 cgh27015 rev 4.0 copyright ? 2005-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. source and load impedances frequency (mhz) z source z load 2300 17.8 - j1.5 16.8 - j1.7 2400 20.3 - j4.0 16.9 - j0.8 2500 20.6 - j7.9 17.2 + j0.2 2600 18.2 - j11.3 17.7 + j1.3 2700 14.6 - j12.6 19.1 + j2.4 note 1. v dd = 28v, i dq = 200ma in the 440166 package. note 2. impedances are extracted from the cgh27015-amp demonstration amplifer and are not source and load pull data derived from the transistor. cgh27015 power dissipation de-rating curve note 1. area exceeds maximum case operating temperature (see page 2). d z source z load g s cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/wireless
7 cgh27015 rev 4.0 copyright ? 2005-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. cgh27015-amp demonstration amplifer circuit bill of materials designator description qty r1,r2 res,1/16w,0603,1%,0 ohms 2 r4 res,1/16w,0603,1%,100 ohms 1 r3 res,1/16w,0603,1%,22.6 ohms 1 c6 cap, 470pf, 5%,100v, 0603 1 c17 cap, 33 uf, 20%, g case 1 c16 cap, 1.0uf, 100v, 10%, x7r, 1210 1 c8 cap 10uf 16v tantalum 1 c14 cap, 100.0pf, +/-5%, 0603 1 c4 cap, 15pf, +/-5%, 0603 1 c1 cap, 1.8pf, +/-0.1pf, 0603 1 c2, c10, c11 cap, 2.0pf, +/-0.1pf, 0603 3 c5,c13 cap, 39pf, +/-5%, 0603 2 c7,c15 cap,33000pf, 0805,100v, x7r 2 j3,j4 conn sma str panel jack recp 1 j2 header rt>plz.1cen lk 2 pos 1 j1 header rt>plz .1cen lk 5pos 1 - pcb, ro4350b, er = 3.48, h = 20 mil 1 - CGH27015F or cgh27015p 1 cgh27015-amp demonstration amplifer circuit cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/wireless
8 cgh27015 rev 4.0 copyright ? 2005-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. cgh27015-amp demonstration amplifer circuit schematic cgh27015-amp demonstration amplifer circuit outline cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/wireless
9 cgh27015 rev 4.0 copyright ? 2005-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. typical package s-parameters for cgh27015 (small signal, v ds = 28 v, i dq = 100 ma, angle in degrees) frequency mag s11 ang s11 mag s21 ang s21 mag s12 ang s12 mag s22 ang s22 500 mhz 0.909 -124.41 17.41 107.81 0.026 21.06 0.335 -93.73 600 mhz 0.902 -134.04 15.04 101.48 0.027 15.39 0.322 -101.61 700 mhz 0.898 -141.62 13.18 96.16 0.028 10.74 0.315 -107.78 800 mhz 0.894 -147.78 11.71 91.54 0.028 6.79 0.312 -112.73 900 mhz 0.892 -152.91 10.51 87.43 0.028 3.35 0.312 -116.77 1.0 ghz 0.890 -157.30 9.53 83.68 0.028 0.28 0.314 -120.15 1.1 ghz 0.889 -161.12 8.71 80.20 0.028 -2.51 0.318 -123.04 1.2 ghz 0.889 -164.51 8.01 76.95 0.028 -5.07 0.322 -125.57 1.3 ghz 0.888 -167.56 7.41 73.86 0.028 -7.45 0.328 -127.82 1.4 ghz 0.888 -170.34 6.89 70.91 0.028 -9.69 0.335 -129.87 1.5 ghz 0.888 -172.91 6.44 68.07 0.028 -11.81 0.342 -131.77 1.6 ghz 0.888 -175.30 6.04 65.32 0.028 -13.82 0.349 -133.56 1.7 ghz 0.888 -177.55 5.69 62.65 0.027 -15.74 0.357 -135.25 1.8 ghz 0.888 -179.68 5.37 60.05 0.027 -17.58 0.364 -136.89 1.9 ghz 0.888 178.29 5.09 57.50 0.027 -19.34 0.373 -138.48 2.0 ghz 0.888 176.34 4.83 55.01 0.027 -21.04 0.381 -140.03 2.1 ghz 0.889 174.45 4.60 52.56 0.026 -22.69 0.389 -141.55 2.2 ghz 0.889 172.63 4.39 50.14 0.026 -24.27 0.397 -143.06 2.3 ghz 0.889 170.84 4.20 47.76 0.026 -25.80 0.405 -144.56 2.4 ghz 0.889 169.10 4.02 45.41 0.025 -27.28 0.413 -146.04 2.5 ghz 0.890 167.39 3.86 43.09 0.025 -28.70 0.421 -147.52 2.6 ghz 0.890 165.71 3.71 40.79 0.025 -30.08 0.429 -149.00 2.7 ghz 0.891 164.04 3.57 38.51 0.024 -31.41 0.437 -150.48 2.8 ghz 0.891 162.39 3.44 36.26 0.024 -32.69 0.445 -151.95 2.9 ghz 0.891 160.76 3.32 34.01 0.024 -33.92 0.452 -153.43 3.0 ghz 0.892 159.13 3.21 31.79 0.023 -35.10 0.459 -154.92 3.2 ghz 0.892 155.89 3.00 27.38 0.023 -37.31 0.473 -157.90 3.4 ghz 0.893 152.65 2.83 23.00 0.022 -39.32 0.486 -160.90 3.6 ghz 0.893 149.39 2.67 18.66 0.021 -41.09 0.499 -163.93 3.8 ghz 0.894 146.09 2.54 14.34 0.020 -42.63 0.510 -166.99 4.0 ghz 0.894 142.74 2.41 10.02 0.020 -43.90 0.521 -170.10 4.2 ghz 0.895 139.33 2.31 5.70 0.019 -44.88 0.530 -173.24 4.4 ghz 0.895 135.84 2.21 1.37 0.018 -45.53 0.539 -176.45 4.6 ghz 0.895 132.26 2.12 -2.98 0.018 -45.84 0.547 -179.71 4.8 ghz 0.895 128.59 2.04 -7.36 0.017 -45.78 0.554 176.97 5.0 ghz 0.895 124.80 1.97 -11.79 0.016 -45.32 0.561 173.56 5.2 ghz 0.895 120.90 1.91 -16.27 0.016 -44.47 0.566 170.07 5.4 ghz 0.895 116.87 1.85 -20.81 0.016 -43.25 0.571 166.48 5.6 ghz 0.895 112.70 1.80 -25.41 0.015 -41.72 0.575 162.78 5.8 ghz 0.895 108.38 1.75 -30.10 0.015 -39.97 0.579 158.96 6.0 ghz 0.895 103.92 1.70 -34.88 0.016 -38.13 0.581 155.00 to download the s-parameters in s2p format, go to the cgh27015 product page and click on the documentation tab. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/wireless
10 cgh27015 rev 4.0 copyright ? 2005-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. product dimensions CGH27015F (package type 440166) product dimensions cgh27015p (package type 440196) cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/wireless
11 cgh27015 rev 4.0 copyright ? 2005-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. product ordering information order number description unit of measure image CGH27015F gan hemt each cgh27015p gan hemt each CGH27015F-tb test board without gan hemt each CGH27015F-amp test board with gan hemt installed each cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/wireless
12 cgh27015 rev 4.0 copyright ? 2005-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death or in applications for planning, construction, maintenance or dir ect operation of a nuclear facility. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/rf sarah miller marketing cree, rf components 1.919.407.5302 ryan baker marketing & sales cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.407.5639 cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5778 www.cree.com/wireless

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